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Gawrys P, Djurado D, Rimarcík J, et al. Effect of N-substituents on redox, optical, and electronic properties of naphthalene bisimides used for field-effect transistors fabrication. J Phys Chem B. 2010;114(5):1803-9doi: 10.1021/jp908931w.
Gawrys, P., Djurado, D., Rimarcík, J., Kornet, A., Boudinet, D., Verilhac, J. M., Lukes, V., Wielgus, I., Zagorska, M., & Pron, A. (2010). Effect of N-substituents on redox, optical, and electronic properties of naphthalene bisimides used for field-effect transistors fabrication. The journal of physical chemistry. B, 114(5), 1803-9. https://doi.org/10.1021/jp908931w
Gawrys, Pawel, et al. "Effect of N-substituents on redox, optical, and electronic properties of naphthalene bisimides used for field-effect transistors fabrication." The journal of physical chemistry. B vol. 114,5 (2010): 1803-9. doi: https://doi.org/10.1021/jp908931w
Gawrys P, Djurado D, Rimarcík J, Kornet A, Boudinet D, Verilhac JM, Lukes V, Wielgus I, Zagorska M, Pron A. Effect of N-substituents on redox, optical, and electronic properties of naphthalene bisimides used for field-effect transistors fabrication. J Phys Chem B. 2010 Feb 11;114(5):1803-9. doi: 10.1021/jp908931w. PMID: 20085244.
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