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Xenogiannopoulou E, Tsipas P, Aretouli KE, et al. High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy. Nanoscale. 2015;7(17):7896-905doi: 10.1039/c4nr06874b.
Xenogiannopoulou, E., Tsipas, P., Aretouli, K. E., Tsoutsou, D., Giamini, S. A., Bazioti, C., Dimitrakopulos, G. P., Komninou, P., Brems, S., Huyghebaert, C., Radu, I. P., & Dimoulas, A. (2015). High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy. Nanoscale, 7(17), 7896-905. https://doi.org/10.1039/c4nr06874b
Xenogiannopoulou, E, et al. "High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy." Nanoscale vol. 7,17 (2015): 7896-905. doi: https://doi.org/10.1039/c4nr06874b
Xenogiannopoulou E, Tsipas P, Aretouli KE, Tsoutsou D, Giamini SA, Bazioti C, Dimitrakopulos GP, Komninou P, Brems S, Huyghebaert C, Radu IP, Dimoulas A. High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy. Nanoscale. 2015 May 07;7(17):7896-905. doi: 10.1039/c4nr06874b. PMID: 25856730.
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