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Chang KC, Huang JW, Chang TC, et al. Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer. Nanoscale Res Lett. 2013;8(1):523doi: 10.1186/1556-276X-8-523.
Chang, K. C., Huang, J. W., Chang, T. C., Tsai, T. M., Chen, K. H., Young, T. F., Chen, J. H., Zhang, R., Lou, J. C., Huang, S. Y., Pan, Y. C., Huang, H. C., Syu, Y. E., Gan, D. S., Bao, D. H., & Sze, S. M. (2013). Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer. Nanoscale research letters, 8(1), 523. https://doi.org/10.1186/1556-276X-8-523
Chang, Kuan-Chang, et al. "Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer." Nanoscale research letters vol. 8,1 (2013): 523. doi: https://doi.org/10.1186/1556-276X-8-523
Chang KC, Huang JW, Chang TC, Tsai TM, Chen KH, Young TF, Chen JH, Zhang R, Lou JC, Huang SY, Pan YC, Huang HC, Syu YE, Gan DS, Bao DH, Sze SM. Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer. Nanoscale Res Lett. 2013 Dec 11;8(1):523. doi: 10.1186/1556-276X-8-523. PMID: 24330524; PMCID: PMC3881491.
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