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Morris SJ, Reinhardt F, Richter W, et al. Reflectance anisotropy spectroscopy and reflection high-energy electron diffraction of submonolayer coverages of Si grown on GaAs(001) by molecular-beam epitaxy. Phys Rev B Condens Matter. 1995;51(7):4691-4694doi: 10.1103/physrevb.51.4691.
Morris, S. J., Reinhardt, F., Richter, W., Rose, K. C., Rumberg, J., Westwood, D. I., Williams, R. H., & Woolf, D. A. (1995). Reflectance anisotropy spectroscopy and reflection high-energy electron diffraction of submonolayer coverages of Si grown on GaAs(001) by molecular-beam epitaxy. Physical review. B, Condensed matter, 51(7), 4691-4694. https://doi.org/10.1103/physrevb.51.4691
Morris, et al. "Reflectance anisotropy spectroscopy and reflection high-energy electron diffraction of submonolayer coverages of Si grown on GaAs(001) by molecular-beam epitaxy." Physical review. B, Condensed matter vol. 51,7 (1995): 4691-4694. doi: https://doi.org/10.1103/physrevb.51.4691
Morris SJ, Reinhardt F, Richter W, Rose KC, Rumberg J, Westwood DI, Williams RH, Woolf DA. Reflectance anisotropy spectroscopy and reflection high-energy electron diffraction of submonolayer coverages of Si grown on GaAs(001) by molecular-beam epitaxy. Phys Rev B Condens Matter. 1995 Feb 15;51(7):4691-4694. doi: 10.1103/physrevb.51.4691. PMID: 9979328.
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