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Döhler GH, Gulden KH, Metzner C, et al. In-plane transport properties of heavily delta -doped GaAs n-i-p-i superlattices: Metal-insulator transition, weak and strong localization. Phys Rev B Condens Matter. 1996;54(19):13980-13995doi: 10.1103/physrevb.54.13980.
Döhler, G. H., Gulden, K. H., Metzner, C., Müller, S. G., & Schmidt, T. (1996). In-plane transport properties of heavily delta -doped GaAs n-i-p-i superlattices: Metal-insulator transition, weak and strong localization. Physical review. B, Condensed matter, 54(19), 13980-13995. https://doi.org/10.1103/physrevb.54.13980
Döhler, et al. "In-plane transport properties of heavily delta -doped GaAs n-i-p-i superlattices: Metal-insulator transition, weak and strong localization." Physical review. B, Condensed matter vol. 54,19 (1996): 13980-13995. doi: https://doi.org/10.1103/physrevb.54.13980
Döhler GH, Gulden KH, Metzner C, Müller SG, Schmidt T. In-plane transport properties of heavily delta -doped GaAs n-i-p-i superlattices: Metal-insulator transition, weak and strong localization. Phys Rev B Condens Matter. 1996 Nov 15;54(19):13980-13995. doi: 10.1103/physrevb.54.13980. PMID: 9985317.
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