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Timm R, Head AR, Yngman S, et al. Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide. Nat Commun. 2018;9(1):1412doi: 10.1038/s41467-018-03855-z.
Timm, R., Head, A. R., Yngman, S., Knutsson, J. V., Hjort, M., McKibbin, S. R., Troian, A., Persson, O., Urpelainen, S., Knudsen, J., Schnadt, J., & Mikkelsen, A. (2018). Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide. Nature communications, 9(1), 1412. https://doi.org/10.1038/s41467-018-03855-z
Timm, Rainer, et al. "Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide." Nature communications vol. 9,1 (2018): 1412. doi: https://doi.org/10.1038/s41467-018-03855-z
Timm R, Head AR, Yngman S, Knutsson JV, Hjort M, McKibbin SR, Troian A, Persson O, Urpelainen S, Knudsen J, Schnadt J, Mikkelsen A. Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide. Nat Commun. 2018 Apr 12;9(1):1412. doi: 10.1038/s41467-018-03855-z. PMID: 29651110; PMCID: PMC5897406.
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