Advanced Semiconductor Research Group in the State of Kansas.

[No authors listed]

UIID-NSF: 444

Abstract

Jiang EPS 9977776 This project will establish an Interdisciplinary Research Group in advanced semiconductors in Kansas to forward research in the group III-nitride wide band gap semiconductors, a category of which is recognized as integral to the fabrication of certain optoelectronic and electronic devices capable of operating under high power and high temperature conditions. Despite the strong progress made in this research area, further problems still exist which have to do with materials quality and structure. Devices built with III-nitride materials will advance technological improvements in systems related to communications, transportation and energy. The integrative effort as represented in this project by the scientists and engineers from diverse backgrounds is necessary in order to develop innovative approaches to synthesizing materials, and developing state-of-the-art facilities and specialized instrumentation not achievable in a single investigator program. Commitment of NSF EPSCoR funds to this project will also reinforce further investments by universities and the State of Kansas in the area of advanced semiconductors.

Other Details

• Award Instrument: Standard Grant
• Email: [email protected]
• Organization: Kansas State University
• Other Investigators: Andrew Rys, Gary Wysin, James Edgar, Jingyu Lin
• Primary Investigator: Hongxing Jiang
• Program(s): CENTRAL and EASTERN EUROPE PROGR, EXP PROG TO STIM COMP RES
• Start Date: 08/15/1999