Cite
Lee SM, Yum JH, Yoon S, et al. Atomic-Layer Deposition of Single-Crystalline BeO Epitaxially Grown on GaN Substrates. ACS Appl Mater Interfaces. 2017;9(48):41973-41979doi: 10.1021/acsami.7b13487.
Lee, S. M., Yum, J. H., Yoon, S., Larsen, E. S., Lee, W. C., Kim, S. K., Shervin, S., Wang, W., Ryou, J. H., Bielawski, C. W., & Oh, J. (2017). Atomic-Layer Deposition of Single-Crystalline BeO Epitaxially Grown on GaN Substrates. ACS applied materials & interfaces, 9(48), 41973-41979. https://doi.org/10.1021/acsami.7b13487
Lee, Seung Min, et al. "Atomic-Layer Deposition of Single-Crystalline BeO Epitaxially Grown on GaN Substrates." ACS applied materials & interfaces vol. 9,48 (2017): 41973-41979. doi: https://doi.org/10.1021/acsami.7b13487
Lee SM, Yum JH, Yoon S, Larsen ES, Lee WC, Kim SK, Shervin S, Wang W, Ryou JH, Bielawski CW, Oh J. Atomic-Layer Deposition of Single-Crystalline BeO Epitaxially Grown on GaN Substrates. ACS Appl Mater Interfaces. 2017 Dec 06;9(48):41973-41979. doi: 10.1021/acsami.7b13487. Epub 2017 Nov 27. PMID: 29148718.
Copy
Download .nbib